Self-biased gate driver architecture

A system includes a primary field effect transistor (FET) coupled to a primary winding on a primary side of an alternating current-to-direct current (AC-DC) converter. The system also includes a gate driver, coupled to the primary FET, that is to, in response to a signal received from a startup cont...

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Bibliographic Details
Main Authors Lee, Myeongseok, Nayak, Anup, Lilamwala, Murtuza
Format Patent
LanguageEnglish
Published 09.03.2021
Subjects
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS
CONTROL OR REGULATION THEREOF
CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRICITY
GENERATION
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Summary:A system includes a primary field effect transistor (FET) coupled to a primary winding on a primary side of an alternating current-to-direct current (AC-DC) converter. The system also includes a gate driver, coupled to the primary FET, that is to, in response to a signal received from a startup controller of the AC-DC converter, turn on the primary FET. The gate driver includes a voltage bias p-type metal-oxide-semiconductor (VBP) buffer coupled between an external supply voltage and a VBP portion of driving chain circuitry, the driving chain circuitry to drive a gate of the primary FET. The gate driver also includes a voltage bias n-type metal-oxide-semiconductor (VBN) buffer coupled between a VBN regulator, which generates an internal supply voltage, and a VBN portion of the driving chain circuitry.
Bibliography:Application Number: US202017024538