Contacts for semiconductor devices

• Main Authors: Li, Wenmei, Chang, Kuo-Tung, Hui, Angela T, Joshi, Amol Ramesh, Ngo, Minh Van
• Format: Patent
• Language: English
• Published: 09.03.2021
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

In an example embodiment, a method comprises: forming first spacers adjacent to a memory cell formed on a substrate, each of the first spacers being formed in direct contact with the substrate, where forming the memory cell includes forming a control gate electrode and a tunnel oxide layer over the substrate and subsequently etching completely at least the control gate electrode and the tunnel oxide layer that are disposed beyond the memory cell; forming an interlayer dielectric layer over the memory cell and the first spacers; forming a contact hole through the interlayer dielectric layer to at least reach the substrate; subsequent to forming the contact hole, forming a second spacer adjacent to one of the first spacers, where a height of the second spacer is greater than a height of the first spacers, the second spacer substantially contacting the substrate and the interlayer dielectric layer; and forming a contact in the contact hole.