ReRAM memory cell having dual word line control
A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected sele...
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Format | Patent |
Language | English |
Published |
02.02.2021
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Subjects | |
Online Access | Get full text |
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Abstract | A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected select transistors having a gate connected to a separate control line. |
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AbstractList | A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected select transistors having a gate connected to a separate control line. |
Author | McCollum, John L Nguyen, Victor Xue, Fengliang Dhaoui, Fethi |
Author_xml | – fullname: Nguyen, Victor – fullname: Dhaoui, Fethi – fullname: McCollum, John L – fullname: Xue, Fengliang |
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Notes | Application Number: US201916405895 |
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Snippet | A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INFORMATION STORAGE PHYSICS SEMICONDUCTOR DEVICES STATIC STORES |
Title | ReRAM memory cell having dual word line control |
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