ReRAM memory cell having dual word line control
A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected sele...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
02.02.2021
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Subjects | |
Online Access | Get full text |
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Summary: | A ReRAM memory cell includes a ReRAM device including a solid electrolyte layer disposed between a first ion-source electrode and a second electrode and a select circuit including two series-connected select transistors connected in series with the ReRAM device, each of the two series-connected select transistors having a gate connected to a separate control line. |
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Bibliography: | Application Number: US201916405895 |