Method for fabricating semiconductor device

A method for fabricating semiconductor device includes the steps of: forming a shallow trench isolation (STI) in the substrate; removing part of the STI to form a trench in a substrate; forming an amorphous silicon layer in the trench and on the STI; performing an oxidation process to transform the...

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Bibliographic Details
Main Authors Chen, Po-Chun, Chang, Chia-Lung, Chen, Yi-Wei, Liu, Wei-Hsin, Tsai, Han-Yung
Format Patent
LanguageEnglish
Published 26.01.2021
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for fabricating semiconductor device includes the steps of: forming a shallow trench isolation (STI) in the substrate; removing part of the STI to form a trench in a substrate; forming an amorphous silicon layer in the trench and on the STI; performing an oxidation process to transform the amorphous silicon layer into a silicon dioxide layer; and forming a barrier layer and a conductive layer in the trench.
Bibliography:Application Number: US201815943717