Embedded non-volatile memory with side word line

A storage device includes a semiconductor substrate, a control gate, a word line, a dielectric layer, a charge storage nitride layer, and a blocking layer. The semiconductor substrate has a source region and a drain region. The control gate and a word line are disposed over the semiconductor substra...

Full description

Saved in:
Bibliographic Details
Main Authors Yang, Tsung-Yu, Tu, Yung-Chun, Huang, Chung-Jen
Format Patent
LanguageEnglish
Published 29.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A storage device includes a semiconductor substrate, a control gate, a word line, a dielectric layer, a charge storage nitride layer, and a blocking layer. The semiconductor substrate has a source region and a drain region. The control gate and a word line are disposed over the semiconductor substrate and located between the source and drain regions. The dielectric layer is in contact with the semiconductor substrate and disposed between the semiconductor substrate, the control gate, and the word line. The charge storage nitride layer is disposed between the dielectric layer and the control gate. The blocking layer is disposed between the charge storage nitride layer and the control gate.
Bibliography:Application Number: US201715428260