Method for modifying the strain state of a block of a semiconducting material

A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following order: a) forming an amorphous lower region in the block of semiconducting material resting on a substrate amorphous, while maintaining the cryst...

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Main Authors Wacquez, Romain, Reboh, Shay, Maitrejean, Sylvain
Format Patent
LanguageEnglish
Published 29.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Abstract A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following order: a) forming an amorphous lower region in the block of semiconducting material resting on a substrate amorphous, while maintaining the crystalline structure of an upper region of the block, which is in contact with the lower region; b) performing at least one creep annealing of the block with a suitable duration and temperature so that creep occurs in the lower region and without recrystallizing the material of this lower region; and c) performing at least one recrystallization annealing of the lower region of the block.
AbstractList A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following order: a) forming an amorphous lower region in the block of semiconducting material resting on a substrate amorphous, while maintaining the crystalline structure of an upper region of the block, which is in contact with the lower region; b) performing at least one creep annealing of the block with a suitable duration and temperature so that creep occurs in the lower region and without recrystallizing the material of this lower region; and c) performing at least one recrystallization annealing of the lower region of the block.
Author Maitrejean, Sylvain
Reboh, Shay
Wacquez, Romain
Author_xml – fullname: Wacquez, Romain
– fullname: Reboh, Shay
– fullname: Maitrejean, Sylvain
BookMark eNrjYmDJy89L5WTw9U0tychPUUjLL1LIzU_JTKvMzEtXKMlIVSguKUrMzANSiSWpCvlpCokKSTn5ydkQZnFqbmZyfl5KaXIJSH0uUE1RZmIODwNrWmJOcSovlOZmUHRzDXH20E0tyI9PLS5ITE7NSy2JDw02NLAwtzSwMHYyMiZGDQDJijex
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
ExternalDocumentID US10879083B2
GroupedDBID EVB
ID FETCH-epo_espacenet_US10879083B23
IEDL.DBID EVB
IngestDate Fri Jul 19 15:39:20 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language English
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_US10879083B23
Notes Application Number: US201414575329
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201229&DB=EPODOC&CC=US&NR=10879083B2
ParticipantIDs epo_espacenet_US10879083B2
PublicationCentury 2000
PublicationDate 20201229
PublicationDateYYYYMMDD 2020-12-29
PublicationDate_xml – month: 12
  year: 2020
  text: 20201229
  day: 29
PublicationDecade 2020
PublicationYear 2020
RelatedCompanies Commissariat á l'énergie atomique et aux énergies alternatives
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
RelatedCompanies_xml – name: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
– name: Commissariat á l'énergie atomique et aux énergies alternatives
Score 3.3020947
Snippet A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following...
SourceID epo
SourceType Open Access Repository
SubjectTerms BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Title Method for modifying the strain state of a block of a semiconducting material
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201229&DB=EPODOC&locale=&CC=US&NR=10879083B2
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp6LzgwjSt6LrujZ5KELblSF0G26VvY2mTWCK7bAV_30vsXO-6FtIQkiOXO53uS-AW0nz3OnlzBS2y02bptxMZU-YwrpP-UA6kuncnfHYGSX242KwaMHLJhZG5wn91MkRkaMy5Pdav9fr7SdWqH0rqzu-wq7yIZp7odFox5YyFDEj9L3hdBJOAiMIvGRmjJ8Q61KXIdzw8bneQRjtKm4YPvsqKmX9W6REh7A7xdWK-ghaoujAfrCpvNaBvbgxeGOz4b3qGOJYF3smiDLJW5mvdIASQfxGKl3ngejYIFJKkhKOIur1u1kp7_eyUGld1XwEqPrOncBNNJwHIxP3tfwhwjKZbY_QP4V2URbiDEjWzznLnAyHULFBXSIV3JWUcol6jUXpOXT_Xqf73-AFHCiCKtcNi11Cu37_EFcogGt-rSn3BfcIi6E
link.rule.ids 230,309,783,888,25576,76882
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFOebTkXnVwTpW9F1W5c-FKEfo-raDbfJ3kbTJjDFdtiK_76X2Dlf9C0kISRHLve73BfAtaBparZTS-fdPtO7NGZ6LNpc58ZtzHrCFJbK3RlGZjDrPsx78xq8rGNhVJ7QT5UcETkqQX4v1Xu92nxiecq3srhhS-zK7wZT29Mq7diQhiJL8xzbH4-8kau5rj2baNETYl3atxBuOPhcbyHEprLagf_syKiU1W-RMtiD7TGulpX7UONZExruuvJaE3bCyuCNzYr3igMIQ1XsmSDKJG95ulQBSgTxGylUnQeiYoNILkhMGIqo1-9mIb3f80ymdZXzEaCqO3cIVwN_6gY67mvxQ4TFbLI5QucI6lme8WMgSSdlVmImOISKDeoSMWd9QSkTqNcYlJ5A6-91Wv8NXkIjmIbDxfA-ejyFXUlc6cZhWGdQL98_-DkK45JdKCp-AauXjpE
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=Method+for+modifying+the+strain+state+of+a+block+of+a+semiconducting+material&rft.inventor=Wacquez%2C+Romain&rft.inventor=Reboh%2C+Shay&rft.inventor=Maitrejean%2C+Sylvain&rft.date=2020-12-29&rft.externalDBID=B2&rft.externalDocID=US10879083B2