Method for modifying the strain state of a block of a semiconducting material

A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following order: a) forming an amorphous lower region in the block of semiconducting material resting on a substrate amorphous, while maintaining the cryst...

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Bibliographic Details
Main Authors Wacquez, Romain, Reboh, Shay, Maitrejean, Sylvain
Format Patent
LanguageEnglish
Published 29.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method is provided for modifying a strain state of a block of a semiconducting material having a crystalline structure, including steps in the following order: a) forming an amorphous lower region in the block of semiconducting material resting on a substrate amorphous, while maintaining the crystalline structure of an upper region of the block, which is in contact with the lower region; b) performing at least one creep annealing of the block with a suitable duration and temperature so that creep occurs in the lower region and without recrystallizing the material of this lower region; and c) performing at least one recrystallization annealing of the lower region of the block.
Bibliography:Application Number: US201414575329