Pattern forming method and semiconductor device manufacturing method

A pattern forming method, including an imprinting process is provided. The method includes preparing a substrate having an organic film; forming a surface film, containing at least one of a metal or a semiconductor, in or on the surface of the organic film. The method further includes forming an ino...

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Bibliographic Details
Main Author Komukai, Toshiaki
Format Patent
LanguageEnglish
Published 29.12.2020
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:A pattern forming method, including an imprinting process is provided. The method includes preparing a substrate having an organic film; forming a surface film, containing at least one of a metal or a semiconductor, in or on the surface of the organic film. The method further includes forming an inorganic film on the surface film; applying an organic mask material onto the inorganic film, and pressing a template having a fine pattern against the organic mask material to form a mask pattern; processing the inorganic film using the mask pattern as a mask; and removing the mask pattern. The organic mask material, when pressed by the template, is cured or solidified by being exposed to an ultraviolet light source. The solidified organic mask includes an overflow portion removable by plasma asking and exposing the surface film underneath.
Bibliography:Application Number: US201916285193