Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a tra...

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Bibliographic Details
Main Authors Katz, Simeon, Zeisel, Roland, Rueckerl, Andreas
Format Patent
LanguageEnglish
Published 22.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a method for structuring a nitride layer (2), comprising the following steps: A) providing a nitride layer (2) formed with silicon nitride of a first type, B) defining regions (40) of said nitride layer (2) to be transformed, and C) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that-at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and-remaining nitride layer (2) regions (21) remain at least 80% untransformed.
Bibliography:Application Number: US201916714447