High density capacitors formed from thin vertical semiconductor structures such as FINFETs

A vertical structure may be used as a high density capacitance for an integrated circuit. These thin vertical structures can be configured to operate as an insulator in a metal-insulator-metal (MIM) capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufact...

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Bibliographic Details
Main Authors Shi, Zhonghai, Tarabbia, Marc L
Format Patent
LanguageEnglish
Published 15.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A vertical structure may be used as a high density capacitance for an integrated circuit. These thin vertical structures can be configured to operate as an insulator in a metal-insulator-metal (MIM) capacitor. The vertical structures may be manufactured using three-dimensional semiconductor manufacturing technology, such as FinFET (fin field effect transistor) technology and manufacturing processes. The capacitors based on thin vertical structures may be integrated with other circuitry that can utilize the thin vertical structures, such as FinFET transistors.
Bibliography:Application Number: US201815910843