Semiconductor device

A semiconductor device includes a first and a second metal layer, the second provided on a same plane as the first layer, and first second and third terminals. A first metal wiring layer is electrically connected to the first terminal. A second metal wiring layer is electrically connected to the sec...

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Bibliographic Details
Main Author Tonedachi, Tatsuo
Format Patent
LanguageEnglish
Published 08.12.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first and a second metal layer, the second provided on a same plane as the first layer, and first second and third terminals. A first metal wiring layer is electrically connected to the first terminal. A second metal wiring layer is electrically connected to the second terminal and the second metal layer and disposed over the first metal wiring layer. A third metal wiring layer is electrically connected to the third terminal and the first metal layer. A first semiconductor chip is provided between the first metal wiring layer and the first metal layer. A second semiconductor chip is provided between the third metal wiring layer and the second metal layer. The first chip has electrodes connected to the first metal wiring layer and the first metal layer. The second chip has electrodes connected to the third metal wiring layer and the second metal layer.
Bibliography:Application Number: US201816160692