Semiconductor device and manufacturing method of semiconductor device

A semiconductor device according to one embodiment includes: a semiconductor substrate having a first surface; a first conductive film that is located over the first surface and is formed to circle in plan view; a second conductive film that is located over the first surface and surrounds the outer...

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Bibliographic Details
Main Author Amo, Atsushi
Format Patent
LanguageEnglish
Published 24.11.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device according to one embodiment includes: a semiconductor substrate having a first surface; a first conductive film that is located over the first surface and is formed to circle in plan view; a second conductive film that is located over the first surface and surrounds the outer periphery of the first conductive film in plan view; a first insulating spacer located between the first conductive film and the second conductive film; a first gate insulating film that is located between the first surface and the first conductive film and the accumulated amount of charges of which changes due to a change in the voltage between the first conductive film and the semiconductor substrate; and a second gate insulating film located between the first surface and the second conductive film.
Bibliography:Application Number: US201916282864