Thin film transistor and display device

• Main Authors: Lee, SangGul, Yu, SangHee, Cho, SukHo, Lim, HwaChun, Kim, GwangTae, Yoo, YeonTaek, Shin, HyunJin, Kim, NamSu, Choi, Hoon
• Format: Patent
• Language: English
• Published: 17.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

In an exemplary embodiment of the present disclosure, a thin film transistor including a gate electrode, an active layer, a source electrode, and a drain electrode on a non-pixel area of a substrate includes a first insulating layer that insulates the gate electrode from the source electrode and the drain electrode, and a second insulating layer that covers the source electrode and the drain electrode. According to an exemplary embodiment of the present disclosure, the first insulating layer and the second insulating layer are configured so as not to be extended to a pixel area of the substrate in order to reduce possible oscillation of transmittance depending on a viewing angle which occurs when a specific light of a light source passes through the pixel area.