Integrated circuit devices having raised via contacts and methods of fabricating the same

• Main Authors: Chen, Jyh-Huei, Tsai, Kuo-Chiang, Cheng, Jye-Yen
• Format: Patent
• Language: English
• Published: 17.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Methods of fabricating an integrated circuit device are provided. The integrated circuit device includes a transistor formed on a substrate. The transistor includes a source region, a drain region, and a gate structure between the source region and the drain region. The integrated circuit device als...