Self aligned replacement metal source/drain finFET
A fin-shaped field effect transistor (finFET) device comprising includes a substrate. an insulating layer displaced over the substrate, and a fin. The device also includes a gate formed over the fin, the gate including: a gate stack; and a high-k dielectric on opposing side of the gate stack. The de...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
27.10.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A fin-shaped field effect transistor (finFET) device comprising includes a substrate. an insulating layer displaced over the substrate, and a fin. The device also includes a gate formed over the fin, the gate including: a gate stack; and a high-k dielectric on opposing side of the gate stack. The device further includes metallic source and drain regions formed over the fin and on opposing sides of the gate. |
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Bibliography: | Application Number: US201916459685 |