Solid-state imaging device and imaging system

A photoelectric conversion unit includes first, second, and third semiconductor regions having first, second, and first conductivity types, respectively. A fourth semiconductor region between the first and third semiconductor regions at the same depth as the second semiconductor region. A charge hol...

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Bibliographic Details
Main Author Toyoguchi, Ginjiro
Format Patent
LanguageEnglish
Published 27.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
PICTORIAL COMMUNICATION, e.g. TELEVISION
SEMICONDUCTOR DEVICES
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Summary:A photoelectric conversion unit includes first, second, and third semiconductor regions having first, second, and first conductivity types, respectively. A fourth semiconductor region between the first and third semiconductor regions at the same depth as the second semiconductor region. A charge holding portion includes a fifth semiconductor region of the first conductivity type. A transfer transistor has a region between the first and fifth semiconductor regions as a channel portion. A pixel isolation portion includes a sixth semiconductor region of the second conductivity type between the third semiconductor regions of adjacent pixels. A relationship V6>V5>V4 is satisfied, where a potential of the fourth semiconductor region to charges is V4, a potential of a region having the highest potential to charges in the channel portion with the transfer transistor being in an off-state is V5, and a potential of the sixth semiconductor region to charges is V6.
Bibliography:Application Number: US201916506111