Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same
In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A n...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English |
Published |
27.10.2020
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Subjects | |
Online Access | Get full text |
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Summary: | In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam. |
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Bibliography: | Application Number: US201916364251 |