Pillar structures for suppressing optical cross-talk

• Main Authors: Mun, Seong Yeol, Bonakdar, Alireza, Phan, Bill
• Format: Patent
• Language: English
• Published: 20.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

An image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of deep trench isolation (DTI) structures are formed laterally with respect to the photodiodes on the backside of the semiconductor substrate. The plurality of DTI structures are arranged between adjacent photodiodes. A plurality of pillar structures extend from a metal grid proximate to the backside and is formed proximate to the backside and aligned with the DTI structures.