Method for manufacturing semiconductor device

A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching th...

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Bibliographic Details
Main Authors Ko, Young Seok, Moon, Joo Young, Kim, Soo Gil
Format Patent
LanguageEnglish
Published 06.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a first sacrificial film over a target layer to be etched, forming a first partition mask over the first sacrificial film, forming a first sacrificial film pattern by etching the first sacrificial film using the first partition mask, forming a first spacer at a sidewall of the first sacrificial film pattern, and forming a first spacer pattern by removing the first sacrificial film pattern. The first partition mask includes a plurality of first line-shaped space patterns extending in a first direction. A width of at least one space pattern located at both edges from among the plurality of first space patterns is smaller than a width of each of other space patterns.
Bibliography:Application Number: US201916413491