Method for producing an optoelectronic device comprising a step of etching the rear face of the growth substrate

The invention relates to a method for manufacturing an optoelectronic device (1), comprising the following steps: a) providing a growth substrate (10) made from a semiconductor material; b) forming a plurality of diodes (20) each comprising a lower face (20i); c) removing at least a portion (12; 13)...

Full description

Saved in:
Bibliographic Details
Main Author Pourquier, Eric
Format Patent
LanguageEnglish
Published 06.10.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The invention relates to a method for manufacturing an optoelectronic device (1), comprising the following steps: a) providing a growth substrate (10) made from a semiconductor material; b) forming a plurality of diodes (20) each comprising a lower face (20i); c) removing at least a portion (12; 13) of the substrate so as to free the lower face (20i); wherein: step a) involves producing a lower part and an upper part of the substrate, the upper part (12) having a uniform thickness (eref) and a level of doping less than that of the lower part; step c) involving removal of the lower part (11) by selective chemical etching with respect to the upper part (12).
Bibliography:Application Number: US201716473665