Methods of defect inspection

Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between m...

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Bibliographic Details
Main Authors Chang, Shu-Hao, Huang, Te-Chih, Hsu, Yuan-Fu, Wang, Shih-Che, Kao, Chen-Yen, Yu, Ta-Ching, Chen, Yi-Hao
Format Patent
LanguageEnglish
Published 06.10.2020
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CALCULATING
CINEMATOGRAPHY
COMPUTING
COUNTING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MATERIALS THEREFOR
MEASURING
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:Embodiments of the present disclosure relate to methods for defect inspection. After pattern features are formed in a structure layer, a dummy filling material having dissimilar optical properties from the structure layer is filled in the pattern features. The dissimilar optical properties between materials in the pattern features and the structure layer increase contrast in images captured by an inspection tool, thus increasing the defect capture rate.
Bibliography:Application Number: US201715833640