Method for forming sealing film, and sealing film

• Main Authors: Yamashita, Masamichi, Mori, Masaki, Fujimoto, Takayoshi
• Format: Patent
• Language: English
• Published: 06.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; METALLURGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

A method for forming a sealing film, in which a buffer layer and a barrier layer whose density is higher than that of the buffer layer are alternately formed on a substrate, includes forming a first buffer layer on a surface of the substrate, forming a first barrier layer on a surface of the first buffer layer, and forming a second buffer layer on a surface of the first barrier layer. A ratio of a thickness of a portion of the first buffer layer in a thickness direction of the substrate relative to a thickness of a portion of the first buffer layer in an inclined direction that is inclined with respect to the thickness direction is closer to 1 than a ratio of a thickness of a portion of the second buffer layer in the thickness direction relative to a thickness of a portion of the second buffer layer in the inclined direction.