Semiconductor device and dicing method

According to an embodiment, a semiconductor device includes a silicon substrate, a device layer, and a lower layer. The device layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a si...

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Bibliographic Details
Main Authors Mizushima, Ichiro, Fujimura, Kazuo, Masuko, Shingo, Takada, Yoshiharu
Format Patent
LanguageEnglish
Published 22.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to an embodiment, a semiconductor device includes a silicon substrate, a device layer, and a lower layer. The device layer is formed on an upper surface of the silicon substrate. The lower layer is formed on a lower surface of the silicon substrate and has a side surface connecting to a side surface of the silicon substrate. At least a pair of side surfaces of the semiconductor device has a curved shape widening from an upper side toward a lower side.
Bibliography:Application Number: US201815918141