Constricted junctionless FinFET/nanowire/nanosheet device having cascode portion

• Main Authors: de Almeida Braga, Nelson, Wong, Hiu Yung, Mickevicius, Rimvydas
• Format: Patent
• Language: English
• Published: 15.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Roughly described, an integrated circuit device includes a semiconductor having an overall length. In successively adjacent longitudinal sequence, the semiconductor includes first, second and third lengths all having a same first conductivity type. One end of the longitudinal sequence (the end adjac...