Constricted junctionless FinFET/nanowire/nanosheet device having cascode portion

• Main Authors: de Almeida Braga, Nelson, Wong, Hiu Yung, Mickevicius, Rimvydas
• Format: Patent
• Language: English
• Published: 15.09.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Roughly described, an integrated circuit device includes a semiconductor having an overall length. In successively adjacent longitudinal sequence, the semiconductor includes first, second and third lengths all having a same first conductivity type. One end of the longitudinal sequence (the end adjacent to the first length) can be referred to a source end of the sequence, and the other end (adjacent to the third length) can be referred to as a drain end. Overlying the second length is a first gate conductor, which defines a first body region. Overlying a cascode portion of the third length is a second gate conductor, which defines a second body region. The second gate conductor preferably is longitudinally continuous with the first gate conductor, but if not, then the two are connected together by other conductors. The first body region is recessed relative to the first and third lengths of the semiconductor.