Power amplifier modules including transistor with grading and semiconductor resistor

One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3...

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Bibliographic Details
Main Authors Ko, Tin Myint, Lehtola, Philip John, Ripley, David Steven, Shao, Hongxiao, Zampardi, Jr., Peter J, Ozalas, Matthew Thomas
Format Patent
LanguageEnglish
Published 08.09.2020
Subjects
AMPLIFIERS
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm−3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.
Bibliography:Application Number: US201816104114