Inverted T channel field effect transistor (ITFET) including a superlattice
A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least...
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| Main Author | |
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| Format | Patent |
| Language | English |
| Published |
01.09.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include source and drain regions on opposing ends of the inverted T channel, and a gate overlying the inverted T channel between the source and drain regions. |
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| AbstractList | A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include source and drain regions on opposing ends of the inverted T channel, and a gate overlying the inverted T channel between the source and drain regions. |
| Author | Stephenson, Robert John |
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| Notes | Application Number: US201916380149 |
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| Snippet | A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | Inverted T channel field effect transistor (ITFET) including a superlattice |
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