Inverted T channel field effect transistor (ITFET) including a superlattice

A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least...

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Bibliographic Details
Main Author Stephenson, Robert John
Format Patent
LanguageEnglish
Published 01.09.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device may include a substrate and an inverted T channel on the substrate and including a superlattice. The superlattice may include stacked groups of layers, with each group of layers including stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include source and drain regions on opposing ends of the inverted T channel, and a gate overlying the inverted T channel between the source and drain regions.
Bibliography:Application Number: US201916380149