Semiconductor memory device
A semiconductor memory device comprises a first memory cell array including a first memory cell and a second memory cell array including a second memory cell, a first transistor electrically connectable to a first end of the first memory cell via a first source line, a second transistor connectable...
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| Main Authors | , , , , , , , |
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| Format | Patent |
| Language | English |
| Published |
01.09.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A semiconductor memory device comprises a first memory cell array including a first memory cell and a second memory cell array including a second memory cell, a first transistor electrically connectable to a first end of the first memory cell via a first source line, a second transistor connectable to a first end of the second memory cell via a second source line, a pad supplied with a reference voltage from outside, a first wiring that electrically connects the first transistor and the pad, and a second wiring that is different from the first wiring and electrically connects the second transistor and the pad. |
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| AbstractList | A semiconductor memory device comprises a first memory cell array including a first memory cell and a second memory cell array including a second memory cell, a first transistor electrically connectable to a first end of the first memory cell via a first source line, a second transistor connectable to a first end of the second memory cell via a second source line, a pad supplied with a reference voltage from outside, a first wiring that electrically connects the first transistor and the pad, and a second wiring that is different from the first wiring and electrically connects the second transistor and the pad. |
| Author | Kataoka, Hideyuki Kato, Koji Suzuki, Yoshinao Shimizu, Yuui Fujimoto, Takumi Shimizu, Yuki Kamata, Yoshihiko Kobayashi, Tsukasa |
| Author_xml | – fullname: Kamata, Yoshihiko – fullname: Fujimoto, Takumi – fullname: Shimizu, Yuki – fullname: Kato, Koji – fullname: Kataoka, Hideyuki – fullname: Kobayashi, Tsukasa – fullname: Suzuki, Yoshinao – fullname: Shimizu, Yuui |
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| Notes | Application Number: US201816120298 |
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| RelatedCompanies | TOSHIBA MEMORY CORPORATION |
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| Snippet | A semiconductor memory device comprises a first memory cell array including a first memory cell and a second memory cell array including a second memory cell,... |
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| Title | Semiconductor memory device |
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