Method of manufacturing a curved semiconductor die

A method of manufacturing a curved semiconductor die includes: designing a semiconductor die design by conducting finite element analysis of an initial semiconductor die design having a partial spherical curvature, the initial semiconductor die design including a shape of a semiconductor die and a l...

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Bibliographic Details
Main Authors McKnight, Geoffrey P, Gurga, Alexander R, Keefe, Andrew C, Freeman, Ryan
Format Patent
LanguageEnglish
Published 18.08.2020
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Summary:A method of manufacturing a curved semiconductor die includes: designing a semiconductor die design by conducting finite element analysis of an initial semiconductor die design having a partial spherical curvature, the initial semiconductor die design including a shape of a semiconductor die and a location and shape of a slit in the semiconductor die; when a size of a gap at the slit in the curved semiconductor die is outside a tolerance, modifying the initial semiconductor die design to provide a revised semiconductor die design and conducting another finite element analysis thereof; when the size of the gap at the slit in the curved semiconductor die is within the tolerance, manufacturing a microfabrication mask utilizing the initial semiconductor die design or the revised semiconductor die design having the size of the gap within the tolerance; forming a semiconductor die by utilizing the microfabrication mask; and curving the semiconductor die.
Bibliography:Application Number: US201916388037