Silicon on insulator with multiple semiconductor thicknesses using layer transfer

An integrated circuit device includes a portion of a support wafer (e.g., a handle wafer), silicon on insulator layer, a first active device, and a second active device. The first active device has a first semiconductor thickness in a dielectric layer (e.g., a buried oxide layer). The first active d...

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Bibliographic Details
Main Authors Liang, Qingqing, Fanelli, Stephen Alan, Goktepeli, Sinan
Format Patent
LanguageEnglish
Published 18.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An integrated circuit device includes a portion of a support wafer (e.g., a handle wafer), silicon on insulator layer, a first active device, and a second active device. The first active device has a first semiconductor thickness in a dielectric layer (e.g., a buried oxide layer). The first active device is on the SOI layer. The second active device has a second semiconductor thickness in the same dielectric layer as the first active device. The supporting wafer supports the first active device and the second active device. The second active device is also on the SOI layer. The first and second thicknesses are different from one another.
Bibliography:Application Number: US201816115352