Integrated circuit for low power SRAM

An integrated circuit structure includes a semiconductor substrate, an active area, a gate electrode, and a butted contact. The active area is oriented in a first direction and has at least one tooth portion extending in a second direction in the semiconductor substrate. The gate electrode overlies...

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Bibliographic Details
Main Authors Lin, Chi-Yen, Tsai, Shun-Chi, Lo, Kuo-Hung, Singh, Gulbagh, Lee, Chih-Ming
Format Patent
LanguageEnglish
Published 18.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:An integrated circuit structure includes a semiconductor substrate, an active area, a gate electrode, and a butted contact. The active area is oriented in a first direction and has at least one tooth portion extending in a second direction in the semiconductor substrate. The gate electrode overlies the active area and extends in the second direction. The butted contact has a first portion above the gate electrode and a second portion above the active area. A portion of the second portion of the butted contact lands on the tooth portion.
Bibliography:Application Number: US201816020855