Method for fabricating semiconductor device including contact bars having narrower portions

A semiconductor device includes a first fin field effect transistor (FinFET) and a contact bar (source/drain (S/D) contact layer). The first FinFET includes a first fin structure extending in a first direction, a first gate structure extending in a second direction crossing the first direction, and...

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Bibliographic Details
Main Authors Guo, Wen-Huei, Mor, Yi-Shien, Chang, Chih-Hao
Format Patent
LanguageEnglish
Published 18.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first fin field effect transistor (FinFET) and a contact bar (source/drain (S/D) contact layer). The first FinFET includes a first fin structure extending in a first direction, a first gate structure extending in a second direction crossing the first direction, and a first S/D structure. The contact bar is disposed over the first S/D structure and extends in the second direction crossing the first S/D structure in plan view. The contact bar includes a first portion disposed over the first S/D structure and a second portion. The second portion overlaps no fin structure and no S/D structure. A width of the second portion in the first direction is smaller than a width of the first portion in the first direction in plan view.
Bibliography:Application Number: US201816049084