Measuring height difference in patterns on semiconductor wafers

An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a fun...

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Bibliographic Details
Main Authors Avniel, Yan, Kris, Roman, Baram, Mor, Girmonsky, Doron, Schwarzband, Ishai, Khristo, Sergey, Levi, Shimon
Format Patent
LanguageEnglish
Published 18.08.2020
Subjects
CALCULATING
COMPUTING
COUNTING
HANDLING RECORD CARRIERS
IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
PHYSICS
PRESENTATION OF DATA
RECOGNITION OF DATA
RECORD CARRIERS
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Summary:An improved technique for determining height difference in patterns provided on semiconductor wafers uses real measurements (e.g., measurements from SEM images) and a height difference determination model. In one version of the model, a measurable variable of the model is expressed in terms of a function of a change in depth of shadow (i.e. relative brightness), wherein the depth of shadow depends on the height difference as well as width difference between two features on a semiconductor wafer. In another version of the model, the measurable variable is expressed in terms of a function of a change of a measured distance between two characteristic points on the real image of a periodic structure with respect to a change in a tilt angle of a scanning electron beam.
Bibliography:Application Number: US201815982918