Low volume showerhead with porous baffle

A low volume showerhead in a semiconductor processing apparatus can include a porous baffle to improve the flow uniformity and purge time during atomic layer deposition. The showerhead can include a plenum volume, one or more gas inlets in fluid communication with the plenum volume, a faceplate incl...

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Bibliographic Details
Main Authors Pasquale, Frank L, Sangplung, Saangrut, Kang, Hu, Swaminathan, Shankar, Chandrasekharan, Ramesh, LaVoie, Adrien
Format Patent
LanguageEnglish
Published 11.08.2020
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Summary:A low volume showerhead in a semiconductor processing apparatus can include a porous baffle to improve the flow uniformity and purge time during atomic layer deposition. The showerhead can include a plenum volume, one or more gas inlets in fluid communication with the plenum volume, a faceplate including a plurality of first through-holes for distributing gas onto a substrate in the semiconductor processing apparatus, and a porous baffle positioned in a region between the plenum volume and the one or more gas inlets. The one or more gas inlets can include a stem having a small volume to improve purge time. The baffle can be porous and positioned between the stem and the plenum volume to improve flow uniformity and avoid jetting.
Bibliography:Application Number: US201514668511