Solar cell comprising CIGS light absorbing layer and method for manufacturing same

• Main Authors: Lee, Ho Gun, Lee, Gyu Hyun, Seok, Dong Soo, Jang, Hyuk Kyoo
• Format: Patent
• Language: English
• Published: 28.07.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The resent invention relates to a method for manufacturing a solar cell, the method comprising the steps of: (a) forming a lower electrode layer on a substrate; (b) forming a CIGS light absorbing layer on the lower electrode layer by supplying a copper precursor to deposit a copper thin film using chemical vapor deposition and then supplying a gallium precursor, an indium precursor, and a first selenium precursor to deposit a gallium thin film and an indium-selenium thin film using chemical vapor deposition; and (c) sequentially forming a buffer layer and a front electrode layer on the CIGS light absorbing layer.