Edge-emitting semiconductor laser

In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in el...

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Bibliographic Details
Main Authors Stojetz, Bernhard, Brüderl, Georg
Format Patent
LanguageEnglish
Published 14.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.
Bibliography:Application Number: US201716092495