Method for manufacturing a semiconductor device having a step of performing ion implantation using a resist pattern as a mask

The reliability of a semiconductor device is improved. A photoresist pattern is formed over a semiconductor substrate. Then, over the semiconductor substrate, a protective film is formed in such a manner as to cover the photoresist pattern. Then, with the photoresist pattern covered with the protect...

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Bibliographic Details
Main Authors Usami, Tatsuya, Nakayama, Tomoo
Format Patent
LanguageEnglish
Published 14.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The reliability of a semiconductor device is improved. A photoresist pattern is formed over a semiconductor substrate. Then, over the semiconductor substrate, a protective film is formed in such a manner as to cover the photoresist pattern. Then, with the photoresist pattern covered with the protective film, an impurity is ion implanted into the semiconductor substrate. Thereafter, the protective film is removed by wet etching, and then, the photoresist pattern is removed.
Bibliography:Application Number: US201815934710