Single path memory sense amplifier circuit

The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a m...

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Bibliographic Details
Main Authors Chiang, Chunsung, Wong, Jack T, Huang, Yentsai, Hao, Wuyang, Pu, Lejan
Format Patent
LanguageEnglish
Published 07.07.2020
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The present disclosure generally relates to semiconductor structures and, more particularly, to a single path memory sense amplifier circuit and methods of manufacture. The circuit includes a sense amplifier circuit comprising a plurality of self-aligned transistors in a single sensing path; and a memory array connected to the sense amplifier circuit by the single sensing path.
Bibliography:Application Number: US201816234954