Reduced resistance source and drain extensions in vertical field effect transistors

• Main Authors: Zhang, Chen, Yeung, Chun W, Xu, Peng
• Format: Patent
• Language: English
• Published: 30.06.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Semiconductor devices and methods of forming the same include forming first charged spacers on sidewalls of a semiconductor fin. A gate stack on the fin is formed over the first charged spacers. Second charged spacers are formed on sidewalls of the fin above the gate stack. The fin is recessed to a...