Semiconductor device having an ohmic electrode including a nickel silicide layer

A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second co...

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Bibliographic Details
Main Authors Kitahara, Kazuhiro, Tashima, Tsukasa, Kitamura, Shoji
Format Patent
LanguageEnglish
Published 30.06.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a silicon carbide semiconductor substrate of the first conductivity type, a first semiconductor region of a second conductivity type, a second semiconductor region of the second conductivity type and connected to the first semiconductor region, a first electrode forming a Schottky-contact with the first semiconductor layer and the first semiconductor region, and a second electrode forming an ohmic contact with the second semiconductor region. The second electrode has a Ti-Al alloy layer on a surface in contact with the first electrode. The second electrode further has therein a nickel silicide layer containing titanium.
Bibliography:Application Number: US201715796913