Bidirectional transistor having a low resistance heterojunction in an on state
A bidirectional heterojunction transistor includes first and second conduction electrodes, first and second gates between the conduction electrodes, and first and second reference electrodes between the gates. The transistor further includes a superposition of semiconductor layers, including channel...
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Main Author | |
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Format | Patent |
Language | English |
Published |
23.06.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A bidirectional heterojunction transistor includes first and second conduction electrodes, first and second gates between the conduction electrodes, and first and second reference electrodes between the gates. The transistor further includes a superposition of semiconductor layers, including channel zones that are vertically in line with the gates, a first conduction zone between the first conduction electrode and the first channel zone, and a second conduction zone between the second conduction electrode and the second channel zone. The superposition of semiconductor layers also includes a third conduction zone that is separated from the first and second conduction zones by the first and second channel zones, respectively, and a first electrical connection that is connected to the third conduction zone and to the first reference electrode. |
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Bibliography: | Application Number: US201916567088 |