Bidirectional transistor having a low resistance heterojunction in an on state

A bidirectional heterojunction transistor includes first and second conduction electrodes, first and second gates between the conduction electrodes, and first and second reference electrodes between the gates. The transistor further includes a superposition of semiconductor layers, including channel...

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Bibliographic Details
Main Author Escoffier, Rene
Format Patent
LanguageEnglish
Published 23.06.2020
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Summary:A bidirectional heterojunction transistor includes first and second conduction electrodes, first and second gates between the conduction electrodes, and first and second reference electrodes between the gates. The transistor further includes a superposition of semiconductor layers, including channel zones that are vertically in line with the gates, a first conduction zone between the first conduction electrode and the first channel zone, and a second conduction zone between the second conduction electrode and the second channel zone. The superposition of semiconductor layers also includes a third conduction zone that is separated from the first and second conduction zones by the first and second channel zones, respectively, and a first electrical connection that is connected to the third conduction zone and to the first reference electrode.
Bibliography:Application Number: US201916567088