Method for forming thin semiconductor-on-insulator (SOI) substrates

Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is fo...

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Bibliographic Details
Main Authors Wu, Cheng-Ta, Tsai, Chia-Shiung, Chou, Shih-Pei, Cheng, Yu-Hung, Tu, Yeur-Luen, Lu, Jiech-Fun, Tzeng, Kuo-Hwa
Format Patent
LanguageEnglish
Published 19.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate without implantation radiation and/or plasma damage. In some embodiments, a device layer is epitaxially formed on a sacrificial substrate and an insulator layer is formed on the device layer. The insulator layer may, for example, be formed with a net charge that is negative or neutral. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates. The sacrificial substrate is removed, and the device layer is cyclically thinned until the device layer has a target thickness. Each thinning cycle comprises oxidizing a portion of the device layer and removing oxide resulting from the oxidizing.
Bibliography:Application Number: US201816103101