Method of manufacturing a memory device

The first electrode (27) comprises an upper portion forming the first face of the first electrode (27). At least one out of the upper portion and the active portion that can change conductive state comprises a porous layer (15).

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Bibliographic Details
Main Authors Bernasconi, Sophie, Halimaoui, Aomar, Charpin-Nicolle, Christelle
Format Patent
LanguageEnglish
Published 12.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:The first electrode (27) comprises an upper portion forming the first face of the first electrode (27). At least one out of the upper portion and the active portion that can change conductive state comprises a porous layer (15).
Bibliography:Application Number: US201815878036