Semiconductor device

• Main Authors: Shindome, Aya, Kajiwara, Yosuke, Kuraguchi, Masahiko
• Format: Patent
• Language: English
• Published: 05.05.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

According to one embodiment, a semiconductor device includes first and second semiconductor layers, first, second, and third electrodes, and first and second insulating portions. The first semiconductor layer includes first, second, and third semiconductor regions. The second semiconductor layer includes first to sixth partial regions. The first electrode is electrically connected to the first partial region. The second electrode is electrically connected to the second partial region. A position of the third electrode is between positions of the first and second electrodes in a second direction. A first direction crosses the second direction from the first to second semiconductor regions. The first insulating portion is provided between the third semiconductor region and the third electrode and between the third partial region and the third electrode in the first direction. The fourth partial region is between the second insulating portion and the second semiconductor region in the first direction.