Methods of forming a transistor and methods of forming an array of memory cells

• Main Authors: Smythe, John A, Hwang, David K, Pandey, Deepak Chandra, Liu, Haitao, Hill, Richard J
• Format: Patent
• Language: English
• Published: 05.05.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

An embodiment of the invention comprises a method of forming a transistor comprising forming a gate construction having an elevationally-outermost surface of conductive gate material that is lower than an elevationally-outer surface of semiconductor material that is aside and above both sides of the...