Semiconductor structure and method for manufacturing the same

A method for manufacturing the semiconductor structure, including: providing a substrate including a first doping region, wherein a field oxide film is disposed on a top surface of the first doping region, a first pattern layer is disposed on a top surface of the field oxide film, and the first patt...

Full description

Saved in:
Bibliographic Details
Main Author Liu, Xianzhou
Format Patent
LanguageEnglish
Published 28.04.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method for manufacturing the semiconductor structure, including: providing a substrate including a first doping region, wherein a field oxide film is disposed on a top surface of the first doping region, a first pattern layer is disposed on a top surface of the field oxide film, and the first pattern layer exposes a portion of the top surface of the field oxide film; etching the field oxide film with the first pattern layer as a mask until a top surface of the substrate is exposed; forming a second doping region in the first doping region with the first pattern layer and the field oxide film as a mask; and forming a plurality of gate structures on a portion of a top surface of the second doping region, a spacer of the field oxide film and a portion of the top surface of the field oxide film.
Bibliography:Application Number: US201816164758