Hall element for 3-D sensing and method for producing the same
A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
21.04.2020
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Subjects | |
Online Access | Get full text |
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Summary: | A method of forming a 3D Hall effect sensor and the resulting device are provided. Embodiments include forming a p-type well in a substrate; forming a first n-type well in a first region surrounded by the p-type well in top view; forming a second n-type well in a second region surrounding the p-type well; providing n-type dopant in the first and second n-type wells; and providing p-type dopant in the p-type well and the first n-type well. |
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Bibliography: | Application Number: US201916399393 |