Semiconductor device and method for forming a low profile embedded wafer level ball grid array molded laser package (EWLB-MLP)

A semiconductor device has a semiconductor die with an encapsulant deposited over and around the semiconductor die. An interconnect structure is formed over a first surface of the encapsulant. An opening is formed from a second surface of the encapsulant to the first surface of the encapsulant to ex...

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Bibliographic Details
Main Authors Yoon, Seung Wook, Lin, Yaojian, Chen, Kang, Fang, Jianmin, Bao, Xusheng, Caparas, Jose A, Marimuthu, Pandi C
Format Patent
LanguageEnglish
Published 14.04.2020
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Summary:A semiconductor device has a semiconductor die with an encapsulant deposited over and around the semiconductor die. An interconnect structure is formed over a first surface of the encapsulant. An opening is formed from a second surface of the encapsulant to the first surface of the encapsulant to expose a surface of the interconnect structure. A bump is formed recessed within the opening and disposed over the surface of the interconnect structure. A semiconductor package is provided. The semiconductor package is disposed over the second surface of the encapsulant and electrically connected to the bump. A plurality of interconnect structures is formed over the semiconductor package to electrically connect the semiconductor package to the bump. The semiconductor package includes a memory device. The semiconductor device includes a height less than 1 millimeter. The opening includes a tapered sidewall formed by laser direct ablation.
Bibliography:Application Number: US201615007518